Compositional and optoelectronic properties of CIS and CIGS thin films formed by electrodeposition
作者： M.E Calixto , P.J Sebastian , R.N Bhattacharya , Rommel Noufi
DOI: 10.1016/S0927-0248(99)00033-1
关键词: Stoichiometry 、 Chemical engineering 、 Microstructure 、 Deposition (phase transition) 、 Solar cell 、 Metallurgy 、 Ternary operation 、 Copper indium gallium selenide solar cells 、 Materials science 、 Carbon film 、 Thin film
摘要: Abstract CuInSe2 (CIS) and Cu(In,Ga)Se2 (CIGS) thin films were prepared by electrodeposition processing. The influence of film deposition parameters such as bath composition, pH, potential material purity on properties was studied. structural, morphological, compositional opto-electronic electrodeposited selenized CIS CIGS characterized using various techniques. As-deposited well exhibited a compact or granular morphology depending the composition. stoichiometry improved after selenization at 550°C in tubular furnace. are formed with mixed phase composition CuIn2Se3.5 ternary phases.
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