Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer
作者： T. El Asri , M. Raissi , S. Vizzini , A. El Maachi , E.L. Ameziane
DOI: 10.1016/J.APSUSC.2009.11.018
关键词: Annealing (metallurgy) 、 Auger electron spectroscopy 、 Materials science 、 Silicon 、 Cobalt 、 Transmission electron microscopy 、 Diffusion process 、 Analytical chemistry 、 Oxide 、 Aluminum oxide
摘要: Optical emission spectroscopy of sputtered species during ion bombardment, Auger electron and high-resolution transmission microscopy were used to study the cobalt silicon diffusion through interfaces Co/AlO/Si(0 0 1) hetero-structure. The results are discussed as a function annealing temperature sample show that process at starts for temperatures above 200 °C without detectable modification oxide layer.
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