Light Emission and Scanning Electron Microscopic Characterization of Porous Silicon
作者： K. Berrada , H. Targaoui , A. Kaddouri , G. Louarn , G. Froyer
DOI: 10.1080/00387010701429351
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摘要: Abstract Optical emission resulting from sputtered species during ion bombardment of porous and oxidized silicon targets has been studied. Samples were bombarded with 5‐keV Kr+ ions at an incidence angle 70 degrees, the light emitted was analyzed over wavelength range 200–300 nm. The surface morphology investigated, micrographs revealed grooves parallel to plane when porosity surprisingly observed in under each pore. results are discussed as a function targets.
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