Growth and oxidation of aluminum thin films deposited on Ag(1 1 1)
作者： H. Oughaddou , S. Vizzini , B. Aufray , B. Ealet , J.-M. Gay
DOI: 10.1016/J.APSUSC.2005.06.024
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摘要: Abstract Auger electron spectroscopy (AES) and low energy diffraction (LEED) were used to study the first steps of growth oxidation aluminum on Ag(1 1 1) substrate. We find that at room temperature (RT) shows formation a complete monolayer (ML) in epitaxy with After deposition RT one ML, dissolution kinetics is recorded 200 ° C bulk diffusion coefficient deduced. also show ML very rapid, both oxygen do not dissolve silver up 500 C. From AES intensities variations, we deduce composition profile oxide layer which corresponds probably stacking … /Ag/Ag/Al/O.
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