Semiconductor memory device having self-refreshing function
作者： Masaki Tsukude , Kazutami Arimoto
DOI:
关键词: Electronic engineering 、 Current consumption 、 Semiconductor memory 、 Engineering 、 Function (mathematics) 、 Voltage 、 Signal 、 Power supply voltage
摘要: A timing generating circuit generates a signal SRE defining period in which self-refreshing operation is carried out based on extRAS and extCAS. An internal voltage down-converting controls the level of an power supply intVcc to be generated defined by lower than normal operation. As result, semiconductor memory device obtained reduces current consumption simple control circuit.
google.de 参考文章(11)
Jonathan M. Hanbury, Keith Burton, Dynamic random-access memory system with power-up and power-down refresh circuits ,(1988)
David S. Register, Terry J. Parks, Method and apparatus for refreshing a selected portion of a dynamic random access memory ,(1993)
Katsumi Dosaka, Takahiro Komatsu, Masaki Kumanoya, Yasuhiro Konishi, Self-refreshing of dynamic random access memory device and operating method therefor ,(1989)
Katsumi Fukumoto, Non-volatile dynamic random access memory ,(1995)
Masaki Tsukude, Kazutami Arimoto, Hideto Hidaka, Mikio Asakura, Shinji Kawai, Masanori Hayashikoshi, Tsukasa Ooishi, Semiconductor device incorporating internal voltage down converting circuit ,(1992)
Kenichi Sakakibara, Semiconductor memory device incorporated with self-refresh circuit ,(1993)
Kazuo Nakaizumi, Yasaburo Inagaki, Semiconductor dynamic memory device with less power consumption in internal refresh mode ,(1984)
Masaki Ogihara, Screening circuitry for a dynamic random access memory ,(1994)