Intercalation synthesis of cobalt silicide under a graphene layer

摘要: The silicon intercalation under single-layer graphene formed on the surface of an epitaxial Co(0001) film was investigated. experiments were performed conditions ultra-high vacuum. thickness films varied within range up to 1 nm, and temperature their annealing 500°C. characterization samples carried out in situ by methods low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, magnetic linear dichroism photoemission Co 3p electrons. New data obtained evolution atomic electronic structure, as well properties system with increase amount intercalated silicon. It shown that a layer is accompanied synthesis silicide Co2Si solid solution cobalt.