Experimental study of atmospheric pressure chemical vapor deposition of silicon carbide from methyltrichlorosilane

摘要: A comprehensive study of the chemical vapor deposition SiC from methyltrichlorosilane at atmospheric pressure was conducted in this study; its main objectives were to identify range operating parameters which stoichiometric could be deposited and generation reliable kinetic data that used for design processes or infiltration SiC. Deposition experiments a hot-wall, cylindrical reactor temperature ranging 1273 573 K on flat graphite substrates thin molybdenum wires aligned with axis reactor. The obtained results showed rate deposit stoichiometry varied markedly distance entrance exhibited, depending reaction temperature, one two pronounced maxima before beginning isothermal zone reaction, whereas an abrupt transition almost silicon carbide after first maximum. Experiments HCl added feed presence cause complete suppression lead smoother variation residence time It is believed effect exploited improve uniformity reactors interior porous preforms.