Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H2

摘要: Silicon carbide was prepared from SiCl4-CH4-H-2 gaseous precursors by isothermal, isobaric chemical vapor deposition (CVD) at atmospheric pressure and temperatures ranging 900 degrees C to 1100 C. Kinetic studies showed that carbosilane of SiH2Cl2, SiHCl3 SiCl2 formed decomposition SiCl4 CH4 contributed the hexangular facet granular pebble structured SiC. An average apparent activation energy 152 kJ.mol(-1) determined. The overall CVD process controlled not only surface reactions but also complex gas phase reactions. as-deposited thin film characterized using scanning electron microscopy, X-ray diffraction transmission these analysis deposited consisted pure beta-SiC, growth morphology beta-SiC differs structures, which varied with substrate length temperature.