Influence of interface point defect on the dielectric properties of Y doped CaCu3Ti4O12 ceramics
作者： Jianming Deng , Xiaojun Sun , Saisai Liu , Laijun Liu , Tianxiang Yan
DOI: 10.1142/S2010135X16500090
关键词: Phase (matter) 、 Composite material 、 Dielectric 、 Materials science 、 Scanning electron microscope 、 Microstructure 、 Ceramic 、 Doping 、 Conductivity 、 Grain boundary
摘要: CaCu3Ti4−xYxO12 (0≤x≤0.12) ceramics were fabricated with conventional solid-state reaction method. Phase structure and microstructure of prepared characterized by X-ray diffraction (XRD) scanning electron microscopy (SEM), respectively. The impedance modulus tests both suggested the existence two different relaxation behavior, which attributed to bulk grain boundary response. In addition, conductivity dielectric permittivity showed a step-like behavior under 405K. Meanwhile, frequency independence dc conduction became dominant when above CCTO ceramic, rare earth element Y3+ ions as an acceptor used substitute Ti sites, decreasing concentration oxygen vacancy around grain-electrode boundary. reason reduction in low frequencies range was associated Y doping ceramic.
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