Dielectric and conductivity behavior of Mn-doped K 0.5 Na 0.5 NbO 3 single crystal
作者： Tianxiang Yan , Xiaojun Sun , Jianming Deng , Saisai Liu , Feifei Han
DOI: 10.1016/J.SSC.2017.07.009
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摘要: Abstract Dielectric and conduction behaviors of [001]-oriented K 0.5 Na Nb O 3 single crystal (KNN) 0.5 at% Mn-doped KNN (KNN-Mn) have been investigated in a broad temperature range. At low temperatures (330–400 K), an observed slight decrease conductivity could be connected with the decreases hole carrier concentration mobility for KNN-Mn. high (723–773 K) above Cure temperature, dielectric relaxation behavior samples were analyzed by measurements impedance spectroscopy universal response law. The activation energy values frequency ~ 0.97 eV 0.60 eV KNN-Mn, respectively. They attributed to thermal motion double ionized oxygen vacancies formation defect dipoles. compensation mechanism was proposed based on Mn 4+ ion substitution. KNN-Mn promoted higher compared crystal, which gave rise smaller domain size piezoelectric properties.
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Zhi Chen, Guizhong Li, Xiaojun Sun, Laijun Liu, Liang Fang, La2O3 modified 0.4(Ba0.8Ca0.2)TiO3–0.6Bi(Mg0.5Ti0.5)O3 ceramics for high-temperature capacitor applications Ceramics International. ,vol. 41, pp. 11057- 11061 ,(2015) , 10.1016/J.CERAMINT.2015.05.050
Ill Won Kim, Chang Won Ahn, Jin Soo Kim, Tae Kwon Song, Jong-Sung Bae, Byung Chun Choi, Jung-Hyun Jeong, Jae Shin Lee, Low-frequency dielectric relaxation and ac conduction of SrBi2Ta2O9 thin film grown by pulsed laser deposition Applied Physics Letters. ,vol. 80, pp. 4006- 4008 ,(2002) , 10.1063/1.1482138
Jerry C Whitaker, Mark H Kryder, James F Shackelford, Vijai K Tripathi, Gene DeSantis, Eugene D Fabricius, Michel Daoud Yacoub, Michael Pecht, C Sankaran, Yariv Ephraim, G Clifford Carter, John Brews, John Choma Jr, Wayne Needham, Susan A Garrod, Ashoka KS Bhat, Kenneth R Demarest, Michael Steer, Almon H Clegg, Stanley Salek, Daniel F DiFonzo, Michael D Ciletti, Edward J Delp III, Dennis F Doelitzsch, Kurt L Kosbar, John E McInroy, Sanjay K Mehta, Bogdan M Wilamowski, Peter Aronhime, Igor Filanovsky, Carol Smidts, George Cain, Sawasd Tantaratana, Jerry C Hamann, Sidney Soclof, Rodger E Ziemer, Paul D Franzon, Praveen Asthana, Fred Baumgartner, Terrence Baun, David F Besch, Glenn R Blackwell, Jerome R Breitenbach, Isidor Buchmann, Jonathon A Chambers, Curtis Chan, Tom Chen, Badrul Chowdhury, George I Cohn, James Cottle, Charles H Cox, Kerry Cozad, William E DeWitt, Tom F Edgar, Ezz I El-Masry, Steve Epstein, Cliff Ferris, Robert J Feugate, David Fiske, James E Goldman, Margaret H Hamilton, William F Hammett, Cecil Harrison, James B Hatfield, Robert J Hofinger, James M Howell, Timothy P Hulick, Thomas Koryu Ishii, TS Kalkur, Nicholas Kaplan, Ranga Kasturi, Robert Kubichek, Gopal Lakhani, Francis Long, Shih-Lien Lu, Melissa S Mattmuller, Ed McConnell, Victor Meeldijk, John Meyer, Jan H Mooij, Morris Gibson Jr, John Norgard, Martin Parker, Eugene T Patronis, Benjamin B Peterson, Fabrizio Pollara, Charles Rhodes, Roy W Rising, David E Rittenhause, Richard Rudman, Jerry E Sergent, Ken Seymour, Joy Shetler, David Stafford, Tom Stanley, Michael Starling, Zbigniew J Staszak, Gerhard J Straub, Timothy F Summers, Robert Surette, Stuart K Tewksbury, Cynthia L Tomovic, Sadrul Ula, Ardie D Walser, Robert Weirather, Douglas H Werner, Donald White, Allan White, Fred Wylie, Harry E Young, John Pierre, Iuliana Bordelon, Stan Felder, Paul Kit-Lai Yu, Constantine Anagnosopoulos, Paul PK Lee, William E Webb, Patricia F Mead, Jeffrey P Tate, Robert Hayes, Pingjuan L Werner, Anthony Ferraro, Bruce W Bomar, Jeff Englebert, Steve Hassett, Bernard E McTaggart, Bob Paulson, David Kosiba, Aziz Inan, William Roberts, William H Tranter, Leon Couch, Michael A Soderstrand, Dave Jernigan, Haqbae Kim, Ravindranath Kollipara, Melvin Belcher, Ken A Chauvin, Barry G Douglas, Elvio J Leonardo, Paul Cardieri, Alvaro A Machado de Medeiros, Hanoch Lev-Ari, The Electronics Handbook CRC Press. ,(2005) , 10.1201/9781315220703
Lixue Zhang, Emre Erdem, Xiaobing Ren, Rüdiger-A. Eichel, Reorientation of (MnTi″−VO••)× defect dipoles in acceptor-modified BaTiO3 single crystals: An electron paramagnetic resonance study Applied Physics Letters. ,vol. 93, pp. 202901- ,(2008) , 10.1063/1.3006327
Shujun Zhang, Ru Xia, Thomas R. Shrout, Modified (K0.5Na0.5)NbO3 based lead-free piezoelectrics with broad temperature usage range Applied Physics Letters. ,vol. 91, pp. 132913- ,(2007) , 10.1063/1.2794400
Yiping Guo, Ken-ichi Kakimoto, Hitoshi Ohsato, Phase transitional behavior and piezoelectric properties of (Na0.5K0.5)NbO3–LiNbO3 ceramics Applied Physics Letters. ,vol. 85, pp. 4121- 4123 ,(2004) , 10.1063/1.1813636
Kai Chen, Guisheng Xu, Danfeng Yang, Xiaofeng Wang, Junbao Li, Dielectric and piezoelectric properties of lead-free 0.95(K0.5Na0.5)NbO3–0.05LiNbO3 crystals grown by the Bridgman method Journal of Applied Physics. ,vol. 101, pp. 044103- ,(2007) , 10.1063/1.2562464
Yoichi Kizaki, Yuji Noguchi, Masaru Miyayama, Defect control for low leakage current in K0.5Na0.5NbO3 single crystals Applied Physics Letters. ,vol. 89, pp. 142910- ,(2006) , 10.1063/1.2357859
Yuji NOGUCHI, Masaru MIYAYAMA, Effect of Mn doping on the leakage current and polarization properties in K0.14Na0.86NbO3 ferroelectric single crystals Journal of the Ceramic Society of Japan. ,vol. 118, pp. 711- 716 ,(2010) , 10.2109/JCERSJ2.118.711
Yumi Inagaki, Ken-ichi Kakimoto, Dielectric and Piezoelectric Properties of Mn-Doped Na0.5K0.5NbO3 Single Crystals Grown by Flux Method Applied Physics Express. ,vol. 1, pp. 061602- ,(2008) , 10.1143/APEX.1.061602