Defect control for low leakage current in K0.5Na0.5NbO3 single crystals
作者： Yoichi Kizaki , Yuji Noguchi , Masaru Miyayama
DOI: 10.1063/1.2357859
关键词:
摘要: Leakage current properties of K0.5Na0.5NbO3 (KNN) single crystals grown by a flux method have been investigated to establish guiding principle defect control for high-performance lead-free piezoelectric devices. The substitution Mn at the Nb site and following annealing under moderate oxidation condition was effective suppressing leakage KNN crystals. Electron spin resonance measurements demonstrate that during plays an essential role in low system. Mn-doped exhibited density (∼10−8A∕cm2) relatively large remanent polarization 40μC∕cm2 25°C.
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