Suppression of gallium inhomogeneity in ZnO nanostructures on GaN using seed layers

作者: Yong Xie , Wanqi Jie , Anton Reiser , Martin Feneberg , Ingo Tischer

DOI: 10.1016/J.MATLET.2012.05.119

关键词: NanotechnologyDiffusionScanning electron microscopeChemical vapor depositionZincOptoelectronicsCathodoluminescenceGalliumExcitonMaterials scienceNanostructure

摘要: Abstract Using two different types of seed layers, ZnO nanostructures were grown on c-plane GaN. Atomic force microscopy and scanning electron used to characterize the morphology layers nanostructures. Well-faceted nano-pillars nano-needles can be respectively. Spatially spectrally resolved cathodoluminescence (CL) was recorded probe single The CL spectra nanosructures are dominated by gallium donor bound excitons, which show uniform incorporation along growth direction. For we find strong in-diffusion, whereas less diffusion.

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