Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction
作者： Chih-Han Chen , Shoou-Jinn Chang , Sheng-Po Chang , Meng-Ju Li , I-Cherng Chen
DOI: 10.1016/J.CPLETT.2009.06.007
关键词:
摘要: Abstract Vertical well-aligned zinc oxide (ZnO) nanowires were grown on p-GaN/ sapphire to produce a p–n heterojunction using the vapor–liquid–solid (VLS) process. A in an ultraviolet photodetector was successfully demonstrated. The length of ZnO p-GaN epilayer range 0.7–1 μm and diameter 80–100 nm. current–voltage curve demonstrates obvious rectifying diode behavior dark environment. Under UV light (365 nm), current almost 15 times that at −5 V. Continuous measurements indicate reproducibility stability this photodetector.
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