A scanning tunneling microscopy study of PH3 adsorption on Si(111)-7x7 surfaces, P-segregation and thermal desorption

摘要: PH3 adsorption on Si(1 1 1)-7 × 7 was studied after various exposures between 0.3 and 60 L at room temperature by means of scanning tunneling microscopy (STM). PH3-, PH2-, H-reacted, unreacted adatoms can be identified analyzing empty-state STM images different sample biases. PHx-reacted rest-atoms observed in if neighboring are hydrogen terminated. Most the adsorbs dissociatively surface, generating H- PH2-adsorbed rest-atom adatom sites. Dangling-bonds sites more reactive than faulted half unit cell is unfaulted half. Center overwhelmingly preferred over corner for PH2 adsorption. The saturation P coverage ∼0.18 ML. Annealing PH3-reacted surfaces 900 K generates disordered, partially P-covered surfaces, but dosing forms P/Si(1 1)-63 surfaces. Si deposition 510 leaves disordered clusters which cannot reordered annealing up to 800 K. However, above recreates Surface morphologies formed sequential rapid thermal also presented.