Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals
作者： Taro Hayakawa , Yuki Nakashima , Koichi Koyama , Keisuke Ohdaira , Hideki Matsumura
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摘要: A phosphorus (P)-doped ultrathin n+ layer is formed on crystalline silicon (c-Si) using radicals generated by the catalytic cracking reaction of phosphine (PH3) gas with a heated catalyzer. The carrier concentration and depth distributions P atoms are investigated Hall effect secondary ion mass spectrometry (SIMS), respectively. surface p-type c-Si substrate converted to n-type this doping even at temperature 20 °C, when tungsten (W) catalyzer 1300 °C. SIMS measurements demonstrate that exist surface. However, obtained do not change, for increase in from 80 350 °C or radical exposure time 60 3600 s. Although sheet increased temperature, only slightly time. It revealed mechanism does appear be same as thermal diffusion, but P-related species Si plays key role doping.
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