Structural properties of ultrathin arsenic‐doped layers in silicon
作者： M. W. Denhoff , T. E. Jackman , J. P. McCaffrey , J. A. Jackman , W. N. Lennard
DOI: 10.1063/1.100707
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摘要: We have grown δ‐doped layers in Si by low‐energy As‐ion implantation during molecular beam epitaxy. The were investigated using cross‐sectional transmission electron microscopy, secondary‐ion mass spectrometry, Rutherford backscattering, and electrical measurements. between 3.5 5.5 nm thick, showed perfect epitaxy with 50–80% of the incorporated As on substitutional sites. Layers doped at concentrations from 1×1013 cm−2 to 8×1013 had bulk‐like mobilities spanned metal insulator transition.
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