Metal-insulator transition in Si: As
作者： P. F. Newman , D. F. Holcomb
关键词:
摘要:
harvard.edu
sci-hub.se 参考文章(15)
T. F. Rosenbaum, K. Andres, G. A. Thomas, R. N. Bhatt, Sharp Metal-Insulator Transition in a Random Solid Physical Review Letters. ,vol. 45, pp. 1723- 1726 ,(1980) , 10.1103/PHYSREVLETT.45.1723
T. F. Rosenbaum, K. Andres, G. A. Thomas, P. A. Lee, Conductivity Cusp in a Disordered Metal Physical Review Letters. ,vol. 46, pp. 568- 571 ,(1981) , 10.1103/PHYSREVLETT.46.568
N. F. Mott, ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORS Canadian Journal of Physics. ,vol. 34, pp. 1356- 1368 ,(1956) , 10.1139/P56-151
Peter Phillip Edwards, Michell J. Sienko, Universality aspects of the metal-nonmetal transition in condensed media Physical Review B. ,vol. 17, pp. 2575- 2581 ,(1978) , 10.1103/PHYSREVB.17.2575
G. A. Thomas, A. Kawabata, Y. Ootuka, S. Katsumoto, S. Kobayashi, W. Sasaki, Temperature-dependent conductivity of metallic doped semiconductors Physical Review B. ,vol. 26, pp. 2113- 2119 ,(1982) , 10.1103/PHYSREVB.26.2113
E. Abrahams, P. W. Anderson, D. C. Licciardello, T. V. Ramakrishnan, Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions Physical Review Letters. ,vol. 42, pp. 673- 676 ,(1979) , 10.1103/PHYSREVLETT.42.673
B. L. Altshuler, D. Khmel'nitzkii, A. I. Larkin, P. A. Lee, Magnetoresistance and Hall effect in a disordered two-dimensional electron gas Physical Review B. ,vol. 22, pp. 5142- 5153 ,(1980) , 10.1103/PHYSREVB.22.5142
T.F Rosenbaum, K Andres, G.A Thomas, Non-ohmic conductivity of barely localized electrons in three dimensions Solid State Communications. ,vol. 35, pp. 663- 666 ,(1980) , 10.1016/0038-1098(80)90869-8
F. Mousty, P. Ostoja, L. Passari, Relationship between resistivity and phosphorus concentration in silicon Journal of Applied Physics. ,vol. 45, pp. 4576- 4580 ,(1974) , 10.1063/1.1663091
W. R. Thurber, R. L. Mattis, Y. M. Liu, J. J. Filliben, Resistivity‐Dopant Density Relationship for Phosphorus‐Doped Silicon Journal of The Electrochemical Society. ,vol. 127, pp. 1807- 1812 ,(1980) , 10.1149/1.2130006