作者: Jeong-Young Ji , T.-C. Shen
DOI: 10.1103/PHYSREVB.70.115309
关键词:
摘要: Si deposition on H terminated Si(100)-2x1 and 3x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders adatom diffusion enhances surface roughening. The post-growth annealing effect analyzed. shown to remain the growth front up least 10 ML. dihydride units further suppress increase roughness.