Low-temperature silicon epitaxy on hydrogen-terminated Si(001) surfaces

作者: Jeong-Young Ji , T.-C. Shen

DOI: 10.1103/PHYSREVB.70.115309

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摘要: Si deposition on H terminated Si(100)-2x1 and 3x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders adatom diffusion enhances surface roughening. The post-growth annealing effect analyzed. shown to remain the growth front up least 10 ML. dihydride units further suppress increase roughness.

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