Electrical Properties of Thick Epitaxial Silicon Films Deposited at High Rates and Low Temperatures by Mesoplasma Chemical Vapor Deposition
作者： Jose Mario A. Diaz , Munetaka Sawayanagi , Makoto Kambara , Toyonobu Yoshida
DOI: 10.1143/JJAP.46.5315
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摘要: The deposition of homoepitaxial silicon thick films at a rate ~33 nm/s and substrate temperature 360 °C was achieved by mesoplasma chemical vapor deposition. increased linearly with silane partial pressure no significant effect from the temperature. An average Hall mobility ~270 cm2 V-1 s-1 obtained irrespective both Epitaxy such high low under precursor-transport-limited condition thought to be due transport thermally activated atoms/clusters, together atomic hydrogen flux, which are unique characteristics condition.
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