Low temperature silicon epitaxy from trichlorosilane via mesoplasma chemical vapor deposition
作者： Junichi Fukuda , Makoto Kambara , Toyonobu Yoshida
DOI: 10.1016/J.TSF.2011.01.216
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摘要: Abstract Epitaxial silicon thick films have been deposited at around 400 °C by mesoplasma chemical vapor deposition with trichlorosilane (TCS) as source gas. The rate of the Si increases linearly TCS flow and reaches 30 nm/s 15 sccm TCS. These exhibited relatively high hall mobility (~ 200 cm2/V-s) independently rate.
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Oliver Nast, Stuart R. Wenham, Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization Journal of Applied Physics. ,vol. 88, pp. 124- 132 ,(2000) , 10.1063/1.373632
Hitoshi Habuka, Yasuaki Aoyama, Shoji Akiyama, Toru Otsuka, Wei-Feng Qu, Manabu Shimada, Kikuo Okuyama, Chemical process of silicon epitaxial growth in a SiHCl3-H2 system Journal of Crystal Growth. ,vol. 207, pp. 77- 86 ,(1999) , 10.1016/S0022-0248(99)00360-7
M. Kambara, H. Yagi, M. Sawayanagi, T. Yoshida, High rate epitaxy of silicon thick films by medium pressure plasma chemical vapor deposition Journal of Applied Physics. ,vol. 99, pp. 074901- ,(2006) , 10.1063/1.2181279
Jose Mario A. Diaz, Munetaka Sawayanagi, Makoto Kambara, Toyonobu Yoshida, Electrical Properties of Thick Epitaxial Silicon Films Deposited at High Rates and Low Temperatures by Mesoplasma Chemical Vapor Deposition Japanese Journal of Applied Physics. ,vol. 46, pp. 5315- 5317 ,(2007) , 10.1143/JJAP.46.5315
G Beaucarne, F Duerinckx, I Kuzma, K Van Nieuwenhuysen, HJ Kim, J Poortmans, None, Epitaxial thin-film Si solar cells Thin Solid Films. ,vol. 511, pp. 533- 542 ,(2006) , 10.1016/J.TSF.2005.12.003
Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao, Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation Applied Physics Letters. ,vol. 95, pp. 132103- ,(2009) , 10.1063/1.3241076
J.M.A. Diaz, M. Kambara, T. Yoshida, Evolution of Surface Morphology With Hydrogen Dilution During Silicon Epitaxy by Mesoplasma CVD IEEE Transactions on Plasma Science. ,vol. 37, pp. 1723- 1729 ,(2009) , 10.1109/TPS.2009.2024780
S.M. Sze, J.C. Irvin, Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K Solid-state Electronics. ,vol. 11, pp. 599- 602 ,(1968) , 10.1016/0038-1101(68)90012-9
Hitoshi Habuka, Masatake Katayama, Manabu Shimada, Kikuo Okuyama, Nonlinear increase in silicon epitaxial growth rate in a SiHCl3H2 system under atmospheric pressure Journal of Crystal Growth. ,vol. 182, pp. 352- 362 ,(1997) , 10.1016/S0022-0248(97)00354-0
Diego J. Díaz, Todd L. Williamson, Xiaoying Guo, Aditya Sood, Paul W. Bohn, Electroless deposition of gold and platinum for metallization of the intrapore space in porous gallium nitride Thin Solid Films. ,vol. 514, pp. 120- 126 ,(2006) , 10.1016/J.TSF.2006.02.098