Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C.

摘要: Low temperature Si epitaxy has become increasingly important due to its critical role in the encapsulation and performance of buried nanoscale dopant devices. We demonstrate epitaxial growth up nominally 25 nm, at 250°C, with analysis successive steps using STM cross section TEM reveal nature quality growth. images indicate that morphology both on H-terminated (H: Si) is temperatures as low 250 °C. For °C, we show front maintains a constant after reaching specific thickness threshold. Although in-plane mobility silicon affected H: surface presence H atoms during initial sub-monolayer growth, long range order proceeds by island albeit noticeable roughening.