Diamond deposition on WC–Co substrate with amorphous SiC interlayer
作者： Y.-X. Cui , B. Shen , F.-H. Sun
DOI: 10.1179/1743294414Y.0000000250
关键词: Material properties of diamond 、 Transmission electron microscopy 、 Diamond 、 Layer (electronics) 、 Chemical vapor deposition 、 Materials science 、 Composite material 、 Thin film 、 Amorphous solid 、 Scanning electron microscope
摘要: AbstractAn amorphous SiC (a-SiC) thin film is deposited on the WC–Co insert from dimethyldiethoxysilane/hydrogen gas mixture using hot filament chemical vapour deposition (HFCVD) technique. Energy dispersive X-ray spectroscopy, scanning electron microscope, Fourier transform infrared diffraction spectroscopy and transmission microscope are used to characterise as fabricated a-SiC film. Subsequently, an intermediate film, adherent top layer of CVD diamond with well faceted crystallites synthesised interlayer. Rockwell indentation tests indicate that interlayer results in less delamination comparison directly substrate. The multilayer (a-SiC+diamond) coated exhibits better cutting performance longer lifetime than no dry turning Al–Si alloy. By introducing interlayer, adhesion an...
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