Deposition of stress-free diamond films on Si by diamond/β-SiC nanocomposite intermediate layers

摘要: Abstract Stress-free diamond films have been synthesized by using microwave plasma enhanced chemical vapour deposition (MWCVD) technique. Nanocrystalline diamond/β-SiC gradient composite film system was used as an interlayer for the top layers. As a result, Raman phonon line shifts (obtained from layers) corresponding to are recorded very close stress-free value of 1332 cm − 1 . This implies extraordinarily low biaxial compressive stress state in films. The accommodates considerable extent, that occurs due difference thermal expansion coefficient and underlying substrate.