Poly(imide-benzoxazole) gate insulators with high thermal resistance for solution-processed flexible indium-zinc oxide thin-film transistors
作者： Duyoung Wee , Sungmi Yoo , Young Hun Kang , Yun Ho Kim , Jae-Won Ka
DOI: 10.1039/C4TC00709C
关键词: Kapton 、 Optoelectronics 、 Thermal resistance 、 Bending 、 Oxide 、 Materials science 、 Substrate (electronics) 、 Metal 、 Thin-film transistor 、 Transistor
摘要: We prepared a poly(imide-benzoxazole) gate insulator for solution-processed flexible metal oxide thin-film transistors (TFTs). The electrical insulating property of the is maintained up to at least 350 °C. °C-annealed indium-zinc (IZO) TFT with poly(imide-bezoxazole) showed excellent performance field-effect mobility 9.2 cm2 V−1 s−1 and on/off current ratio 1.5 × 106. A IZO was also fabricated directly on Kapton substrate. could be operated during bending. Before bending, were 4.1 4.7 105, respectively. During bending radius 10 mm, slightly decreased 3.2 105.
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