Design and Performance Study of a Compact SOI Polarization Rotator at 1.55 μm

作者: Ajanta Barh , B. M. Azizur Rahman , Ravi K. Varshney , Bishnu P. Pal

DOI: 10.1109/JLT.2013.2286859

关键词: Refractive indexWaveguide (optics)Silicon on insulatorTransmittanceMaterials scienceOptical rotationPolarization rotatorOptoelectronicsTransverse modePolarization (waves)Optics

摘要: We numerically design a compact silicon (Si) based polarization rotator (PR) by exploiting power coupling through phase matching between the TM mode of Si strip waveguide (WG) and TE Si-air vertical slot WG. In such structures, occurs due to horizontal structural asymmetries extremely high modal hybridness refractive index contrast Si-on-insulator (SOI) structure. Design parameters coupler have been optimized achieve PR ~135 μm length at telecommunication wavelength 1.55 μm. Maximum efficiency Cm, which is studied examining transmittance light, achieved as 80% for both conversions. Fabrication tolerances band width operation designed also studied.

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