作者: Ajanta Barh , B. M. Azizur Rahman , Ravi K. Varshney , Bishnu P. Pal
关键词: Refractive index 、 Waveguide (optics) 、 Silicon on insulator 、 Transmittance 、 Materials science 、 Optical rotation 、 Polarization rotator 、 Optoelectronics 、 Transverse mode 、 Polarization (waves) 、 Optics
摘要: We numerically design a compact silicon (Si) based polarization rotator (PR) by exploiting power coupling through phase matching between the TM mode of Si strip waveguide (WG) and TE Si-air vertical slot WG. In such structures, occurs due to horizontal structural asymmetries extremely high modal hybridness refractive index contrast Si-on-insulator (SOI) structure. Design parameters coupler have been optimized achieve PR ~135 μm length at telecommunication wavelength 1.55 μm. Maximum efficiency Cm, which is studied examining transmittance light, achieved as 80% for both conversions. Fabrication tolerances band width operation designed also studied.