Materials aspects of GaAs and InP based structures
作者： V. Swaminathan , A. T. Macrander
DOI:
关键词: Nanotechnology 、 Engineering physics 、 Photonics 、 Crystallographic defect 、 Materials science 、 Characterization (materials science) 、 Reliability (semiconductor) 、 Electronics
摘要: Presents a comprehensive treatment of materials aspects GaAs, InP and related alloys used in the fabricating photonic electronic devices. It includes discussions on point defects dislocations III-V compounds. Coverage focuses state-of-the-art growth characterization; physics chemistry defects; connection between device reliability.
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