Low voltage scanning electron microscopy

摘要: Abstract Low voltage scanning electron microscopy (LVSEM) is the application of SEM at beam energies below 5 keV. The fall in range compared to its magnitude higher leads significant changes interaction volume and secondary backscattered yields. topographic penetration contrast effects which dominate images high are replaced by detector collection efficiency giving less three dimensional but contain more detailed information on surface morphology and, some circumstances, chemistry specimen. In order observe non-conducting specimens a state charge balance must be obtained obviate imaging artifacts. This requires an optimized choice incident energy, sample tilt, current magnification for each sample. stopping power electrons low energy can result enhanced radiation damage. However, because small such damage confined thin, near surface, region combination field emission gun performance lens allows probe size instrument made almost independent chosen over 1–30 keV probable advance sources optics promise still better levels LVSEM.