Dielectric relaxation memory
作者： Cem Basceri , Gurtej Sandhu
DOI:
关键词: Dielectric 、 Specific energy 、 Gate dielectric 、 Analytical chemistry 、 Trap (computing) 、 Energy level 、 Capacitor 、 Atomic layer deposition 、 Materials science 、 Relaxation (physics) 、 Optoelectronics
摘要: A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the contains at least one charge trap site corresponding to specific energy state. The states may be used distinguish memory for structure, allowing invention as device. method of forming cites involves an atomic deposition material pre-determined areas in layer.
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