MOVPE for InP-based optoelectronic device application
作者： I. Gyuro
DOI: 10.1016/S0961-1290(96)80015-9
关键词: Dopant 、 Metalorganic vapour phase epitaxy 、 Optical switch 、 Optoelectronics 、 Epitaxy 、 Laser 、 Wavelength 、 Materials science 、 Optical communication 、 Doping 、 Electrical and Electronic Engineering
摘要: Abstract The rapid development of fibre optical communications requires highly sophisticated devices for the 1.3 μm and 1.5 wavelength regions. basis like lasers, detectors, modulators, converters switches as single or in integrated form is availability high quality epitaxial layers. requirements are exact reproducible control composition (lattice matched strained layers), lateral vertical homogeneity composition, doping level layer thickness well atomically sharp heterointerface, very low (crystalline surface) defect density thermal stability a structure. epilayers should have background level, i.e. minimum concentration unintentional dopants.
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