Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy
作者： Balint Podor , Evgenie F Venger , Tatyana Georgiyevn Kryshtab , Galina N Semenova , Petro M Lytvin
DOI: 10.1117/12.306213
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摘要: The low-temperature photoluminescence and X-:ray structural investigations of the properties InP epilayersgrown from indium melt with rare earth element dysprosium (Dy) addition are presented. Dy influence onintensity. linewidth spectral position near-band-gap emission ofvacancy-impurity bands at 0.75-1. 1 eV isreported. obtained data stoichiornetry changes in epilayers grown considered.Low background doping level free electron concentration below about iO cm3 room temperature for InPepilayers was achieved, that witnessed strong gettering effect. It also ascertained that. incorporatedinto layers various phases forms (like inclusions) lowest using ( C
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