PHOTOLUMINESCENCE AND DOUBLE-CRYSTAL X-RAY STUDY OF InGaAs/InP: EFFECT OF RARE EARTH (DYSPROSIUM) ADDITION DURING LIQUID PHASE EPITAXIAL GROWTH*

摘要: High purity In0.53 Ga0.47 As layers were grown on semi-insulating InP:Fe substrates by liquid phase epitaxy adding small amounts of dysprosium (rare earth) to the melt. Hall effect and photoluminescence measurements showed that addition Dy strongly reduced carrier residual donor concentration, with a concurrent shift excitonic luminescence toward higher energies. The observed effects are ascribed gettering impurities in melt Dy, as well possible incorporation into layers. PACS numbers: 78.55.—m, 72.80.Ey