Growth and characterization of strain-compensated InAsPGaInP and InGaAsGaInP multiple quantum wells
作者： C.W. Tu , X.B. Mei , C.H. Yan , W.G. Bi
DOI: 10.1016/0921-5107(95)01434-9
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摘要: Abstract We have shown that strain compensation is effective in increasing the critical layer thickness or number of periods a multiple quantum well (MQW) structure and improving thermal stability. Compared with strain-uncompensated InAs 0.4 P 0.6 InP MQW (1.3% strain) on substrates, strain-compensated Ga y In 1 − p-i-n exhibits superior structural optical properties, especially electroabsorption characteristics suitable for modulator applications at 1.3 μm. Strain-compensated 0.3 0.7 As MQWs GaAs substrates exhibit better photoluminescence properties are to be more thermally stable.
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