作者: P.S. Shewale , Y.S. Yu
DOI: 10.1016/J.JALLCOM.2015.09.048
关键词: Responsivity 、 Wurtzite crystal structure 、 Materials science 、 Pulsed laser deposition 、 Optoelectronics 、 Photocurrent 、 Photodetection 、 Doping 、 Crystallinity 、 Analytical chemistry 、 Nanorod
摘要: Abstract Mg0.05Zn0.95O (MZO) nanorod (NR) array films have been successfully grown on SiO2/n-Si substrates by pulsed laser deposition (PLD) without any seed layer. The effect of growth time (15–60 min) the structural, surface morphological and UV sensing properties aligned MZO NRs were studied. All samples exhibit hexagonal wurtzite phase with a preferential c-axis orientation that improves increasing time. FESEM images demonstrated grow better alignment greater size for elongated durations. photodetection characteristics investigated in metal–semiconductor–metal (MSM) planar configurations at room temperature are found to be greatly dependent photocurrent increases an increase due improvement film crystallinity mean area nanorods. Both responsivity further measured variation optical power density applied voltage, respectively. Exceedingly stable fast switching photoresponse is seen photodetector having arrays 60 min, which shows highest 22.33 mA/W upon 2 mW/cm2 illumination (365 nm) 5 V bias.