p-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy
作者： L. Svob , C. Thiandoume , A. Lusson , M. Bouanani , Y. Marfaing
DOI: 10.1063/1.126139
关键词: Metalorganic vapour phase epitaxy 、 Materials science 、 Inorganic chemistry 、 Chemical vapor deposition 、 Epitaxy 、 Lithium 、 Photoluminescence 、 Doping 、 Semiconductor 、 Conductivity
摘要: ZnS layers were grown by metalorganic vapor phase epitaxy on GaAs substrates using diethylzinc, ditertiarybutyl sulphide, and triallylamine as organometallic sources. After postgrowth rapid thermal annealing, the showed p-type conductivity with hole concentrations up to 1018 cm−3. Photoluminescence measurements gave additional indications of presence electrically active nitrogen acceptors. In separate experiments, lithium was diffused from a LiH solid source into without precursor. High-conductivity material directly obtained no need anneal.
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