MOVPE growth of ZnS on (1 0 0)GaAs using dimethylzinc and ditertiarybutyl sulphide precursors
作者： C Thiandoume , O Ka , A Lusson , O Gorochov
DOI: 10.1016/S0022-0248(98)00952-X
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摘要: Abstract Epitaxial ZnS films have been grown on (1 0 0)-oriented GaAs substrates by atmospheric pressure metal-organic vapour phase epitaxy (MOVPE), using dimethylzinc (DMZn) and ditertiarybutyl sulphide (DTBS) precursors for obtaining high quality layers. A detailed study of the growth kinetics has enabled us to determine influence deposition temperature T g precursor partial pressures rate, surface morphology crystalline For used here, rates reaching 3.5 μm/h achieved. X-ray measurements result in a diffraction linewidth as low 200 arcsec obtained with ZnSe buffer layer. These data are clear indication good films, when it is considered that value 180 arcsec measured substrate. The double-crystal give additional support this conclusion, since values FWHM 74 25 arcsec above film substrate, respectively. Under optimised conditions, photoluminescence spectra dominated excitonic emissions, free exciton 4.7 meV. experimental clearly show epitaxial layers DMZn/DTBS combination, here first time best our knowledge.
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