Single crystal growth by MOCVD of zinc-based chalcogenides using new group II adduct sources
作者： B. Cockayne , P.J. Wright , A.J. Armstrong , A.C. Jones , E.D. Orrell
DOI: 10.1016/0022-0248(88)90366-1
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摘要: Abstract It is shown that adducts such as Me2Zn(1,4-dioxan) and Me2Zn(1,4-thioxan) can be used to grow high quality layers of ZnSe other wide-band gap II–VI compounds by metalorganic chemical vapour deposition with significant advantages over existing group II precursors.
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