Ellipsometric studies of polished silicon surfaces

摘要: Abstract The optical constants of mechanically polished silicon surfaces were determined at λ = 546.1 nm applying the least squares method to ellipsometric parameters ψ and Δ studied as functions angle incidence in interval 〈70°, 80°〉. These differ considerably from those Si single crystal. For all samples indices refraction spread over 〈4.11, 5.43〉 absorption 〈0.05, 1.90〉. Possible physical models thin surface layer which was damaged during mechanical polishing are qualitatively discussed.