A Multimode Transmitter in 0.13 $\mu\hbox{m}$ CMOS Using Direct-Digital RF Modulator

作者: Aarno Parssinen , Petri Eloranta , Pauli Seppinen , Sami Kallioinen , Tuomas Saarela

DOI: 10.1109/JSSC.2007.908749

关键词: EngineeringModulationElectrical engineeringElectronic engineeringCMOSdBcPower controlSidebandAmplifierNoise floorRF modulator

摘要: This paper presents a system-independent transmitter architecture based on direct-digital RF-modulator which combines the D/A conversion, up-conversion, unwanted sideband rejection, power control, and part of digital image-rejection filtering into single mixed-signal circuit block. The multimode capability is demonstrated with WCDMA, EDGE, WLAN system requirements. modulator achieves 90 dB control range an external amplifier module, WCDMA EVM less than 2% from signal powers -20 dBm to +25 dBm. noise floor level defined by quantization at 190 MHz offset carrier -150 dBc/Hz measured output PA power. analog consumption maximum 92 mW scales down 46 when reducing -43 dBFS. 65 mW. chip implemented standard 0.13 mum 1.2 V CMOS total silicon area 4 mm2.

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