作者: Vishnubhai Vitthalbhai Patel , Alfred Grill , Stephen McConnell Gates
DOI:
关键词: Gate dielectric 、 Plasma-enhanced chemical vapor deposition 、 Dielectric 、 Deposition (phase transition) 、 Materials science 、 Interconnection 、 High-κ dielectric 、 Electronic engineering 、 Electronics 、 Optoelectronics
摘要: A low dielectric constant, multiphase material which can be used as an interconnect in IC chips is disclosed. Also disclosed a method for fabricating constant film utilizing plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of the materials that are prepared by further