Local motifs in GeS2–Ga2S3 glasses

作者: I. Pethes , V. Nazabal , R. Chahal , B. Bureau , I. Kaban

DOI: 10.1016/J.JALLCOM.2016.02.193

关键词: Raman scatteringDiffractionCoordination numberCrystallographyExtended X-ray absorption fine structureMaterials scienceReverse Monte CarloGermaniumAbsorption (chemistry)Tetrahedron

摘要: Abstract The structure of (GeS2)0.75(Ga2S3)0.25 and (GeS2)0.83(Ga2S3)0.17 glasses was investigated by Raman scattering, high energy X-ray diffraction extended absorption fine (EXAFS) measurements at the Ga Ge K-edges. reverse Monte Carlo simulation technique (RMC) used to obtain structural models compatible with EXAFS datasets. It found that coordination number is close four. While atoms have only S neighbors, binds as well showing a violation chemical ordering in GeS2–Ga2S3 glasses. Analysis corner- edge-sharing between [GeS4/2] units revealed about 30% germanium participate edge-shared tetrahedra.

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