Roughness evolution in Ga doped ZnO films deposited by pulsed laser deposition
作者： Yun-yan Liu , Chuan-fu Cheng , Shan-ying Yang , Hong-sheng Song , Gong-xiang Wei
DOI: 10.1016/J.TSF.2011.02.056
关键词: Doping 、 Pulsed laser deposition 、 Surface roughness 、 Deposition (chemistry) 、 Thin film 、 Substrate (electronics) 、 Lateral strain 、 Optics 、 Analytical chemistry 、 Materials science 、 Surface finish
摘要: Abstract We analyze the morphology evolution of Ga doped ZnO(GZO) films deposited on quartz substrates by a laser deposition system. The surface morphologies film samples grown with different times are measured atomic force microscope, and they analyzed quantitatively using image data. In initial stage growth time shorter than 8 min, our analysis shows that GZO influenced such factors as random fluctuations, smoothening effects in deposition, lateral strain substrate. interface width uw(t) correlation length ξ(t) at first decrease t. For larger w(t) increase it indicates roughening exhibits fractal characteristics. By fitting data roughness versus t 4 min to power-law function, we obtain exponent β is 0.3; height–height functions self-affine model, value α about 0.84 for all
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