Pulse repetition rate dependent structural, surface morphological and optoelectronic properties of Ga-doped ZnO thin films grown by pulsed laser deposition

摘要: Abstract Transparent conductive Ga-doped ZnO (GZO) thin films were grown on glass substrates by pulsed laser deposition using 2 at% Ga 2 O 3 doped target. A Substrate temperature of 400 °C and oxygen pressure 7 × 10 −3  Torr was kept constant during the deposition. The effects pulse repetition rate from to 15 Hz crystallographic, surface morphological, optical electrical properties GZO investigated. All samples show hexagonal wurtzite phase with a dominant c-axis orientation optimal crystallization film occurs at 10 Hz; which is slightly better that deposited 5 Hz. AFM FE-SEM analysis revealed growth profoundly influenced thickness increases an increase in due enhancement island density. Hall-effect measurements confirmed all are heavily degenerate semiconductors n-type conductivity. transport found be largely dependent crystallinity; while their transmittance majorly dominated roughness. 5 Hz shows highest figure merit (76.11 × 10 /Ω) as result its optimum sheet resistance (3.63 Ω /□ ) (∼88%).