Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor
作者： J Dzuba , G Vanko , M Držík , I Rýger , M Vallo
DOI: 10.1088/0960-1317/25/1/015001
关键词: Impulse (physics) 、 High-electron-mobility transistor 、 Materials science 、 Acoustics 、 Residual stress 、 Pressure sensor 、 Finite element method 、 Static pressure 、 Deflection (engineering) 、 White light interferometry 、 Structural engineering
摘要: In this paper, selected mechanical properties of a circular AlGaN/GaN diaphragm with an integrated high electron mobility transistor (HEMT) intended for pressure sensing are investigated. Two independent methods were used to determine the residual stress in proposed diaphragms. The resonant frequency method using laser Doppler vibrometry (LDV) vibration measurement was chosen measure natural frequencies while diaphragms excited by acoustic impulse. It is shown that strongly dependent on built-in stress. finite element analysis (FEM) Ansys software performed value from spectra measured. transition behavior between ideal membrane and plate observed discussed. Secondly, bulging white light interferometry (WLI) stress-dependent deflection response under static loading. Regarding results obtained, optimal design electrodes outlined.
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