Optimizing annealing steps for crystalline silicon solar cells with screen printed front side metallization and an oxide‐passivated rear surface with local contacts
作者： S. Kontermann , A. Wolf , D. Reinwand , A. Grohe , D. Biro
DOI: 10.1002/PIP.919
关键词: Carrier lifetime 、 Passivation 、 Thermal oxidation 、 Annealing (metallurgy) 、 Crystalline silicon 、 Optoelectronics 、 Aluminium 、 Materials science 、 Silicon 、 Wafer 、 Electrical engineering
摘要: Silicon solar cells that feature screen printed front contacts and a passivated rear surface with local allow higher efficiencies compared to present industrial exhibit full area side metallization. If thermal oxidation is used for the passivation, final annealing step in processing sequence crucial. On one hand, this post-metallization (PMA) required decreasing recombination velocity (SRV) at aluminum-coated oxide-passivated surface. other PMA can negatively affect metallization leading lower fill factor. This work separately analyzes impact of on both, Measuring dark illuminated IV-curves standard aluminum back field (Al-BSF) silicon reveals metallization, while measuring effective minority carrier lifetime symmetric samples provides information about SRV. One-dimensional simulations are predicting cell performance according contributions from oxide-passivation different temperatures durations. The simulation also includes contacts. An optimized process presented experimentally verified. applied an Efficiencies up 18.1% achieved 148.8 cm2 Czochralski (Cz) wafers. Copyright © 2009 John Wiley & Sons, Ltd.
core.ac.uk
sci-hub.se 参考文章(25)
J. Isenberg, A.S.H. van der Heide, W. Warta, Spatially resolved assessment of power losses due to bulk material quality and metallization problems photovoltaic specialists conference. pp. 907- 910 ,(2005) , 10.1109/PVSC.2005.1488278
G. Grupp, D. Biro, G. Emanuel, R. Preu, F. Schitthelm, G. Willeke, Analysis of silver thick-film contact formation on industrial silicon solar cells photovoltaic specialists conference. pp. 1289- 1292 ,(2005) , 10.1109/PVSC.2005.1488376
Ronald A. Sinton, Andres Cuevas, Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data Applied Physics Letters. ,vol. 69, pp. 2510- 2512 ,(1996) , 10.1063/1.117723
G.J. Dunn, Effect of an Al overlayer on interface states in poly-Si gate MOS capacitors IEEE Electron Device Letters. ,vol. 10, pp. 333- 335 ,(1989) , 10.1109/55.29670
Andrés Cuevas, Daniel Macdonald, Measuring and interpreting the lifetime of silicon wafers Solar Energy. ,vol. 76, pp. 255- 262 ,(2004) , 10.1016/J.SOLENER.2003.07.033
Jan Schmidt, Karsten Bothe, Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon Physical Review B. ,vol. 69, pp. 024107- ,(2004) , 10.1103/PHYSREVB.69.024107
J. R. Haynes, J. A. Hornbeck, Trapping of Minority Carriers in Silicon. II. n -Type Silicon Physical Review. ,vol. 100, pp. 311- 321 ,(1955) , 10.1103/PHYSREV.100.606
S. W. Glunz, S. Rein, J. Y. Lee, W. Warta, Minority carrier lifetime degradation in boron-doped Czochralski silicon Journal of Applied Physics. ,vol. 90, pp. 2397- 2404 ,(2001) , 10.1063/1.1389076
Oliver Schultz, Ansgar Mette, Martin Hermle, Stefan W. Glunz, Thermal oxidation for crystalline silicon solar cells exceeding 19% efficiency applying industrially feasible process technology Progress in Photovoltaics. ,vol. 16, pp. 317- 324 ,(2008) , 10.1002/PIP.814
Michael L. Reed, James D. Plummer, Chemistry of Si‐SiO2 interface trap annealing Journal of Applied Physics. ,vol. 63, pp. 5776- 5793 ,(1988) , 10.1063/1.340317