Semiconductor element, and method of forming silicon-based film
作者： Shotaro Okabe , Masafumi Sano , Shuichiro Sugiyama , Ryo Hayashi , Akira Sakai
DOI:
关键词: Hybrid silicon laser 、 Silicon based 、 Silicon 、 Optoelectronics 、 Nanocrystalline silicon 、 Semiconductor 、 Environmental resistance 、 Electronic engineering 、 Materials science
摘要: The present invention provides a semiconductor element comprising junction composed of silicon-based films, the being characterized in that at least one films contains microcrystal, and microcrystal located interface region containing has no orientation property. Further, wherein property film changes thickness direction microcrystal. In order to provide an inexpensive showing excellent performance, having shortened tact time, increased forming rate, characteristics, including this film, using adhesion environmental resistance.
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