作者: Tetsuro Nakamura , Masafumi Sano
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摘要: There is disclosed a method of producing photovoltaic device, characterized in that it includes steps of: step forming zinc oxide layer on substrate at least by electrolytic deposition; subjecting the to any one treatment selected from group consisting plasma with rare gas or nitrogen gas, ion irradiation, light irradiation and electromagnetic irradiation; semiconductor are made up non-single crystal silicon material containing hydrogen have p-i-n junction.