Magneto-conductance through submicron constriction in ferromagnetic (Ga,Mn)As film
作者： O. Pelya , T. Wosiński , T. Figielski , A. Mąkosa , A. Morawski
DOI: 10.1016/J.JALLCOM.2005.12.119
关键词: Magnetoresistance 、 Magnetic domain 、 Ferromagnetism 、 Semiconductor 、 Weak localization 、 Magnetic field 、 Condensed matter physics 、 Coercivity 、 Conductance 、 Physics 、 Mechanical engineering 、 Materials Chemistry 、 Mechanics of Materials 、 Metals and Alloys
摘要: We fabricated a simple magnetoresistive microdevice formed by narrow constriction of submicron width in the epitaxial film ferromagnetic (Ga,Mn)As semiconductor, and investigated magnetic properties low-temperature charge-carrier transport through constriction. have revealed sharp jumps lowered conductance non-constricted sample an enhanced constricted one, which appeared when sweeping field crossed regions coercive film. argue that both features result from contribution domain wall to conductance. While spin-orbit interaction can be responsible for negative conductance, presumably suppression weak localization effects located results positive
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