Extremely low contact resistances for AlGaAs/GaAs modulation‐doped field‐effect transistor structures
作者： A. Ketterson , F. Ponse , T. Henderson , J. Klem , H. Morkoç
DOI: 10.1063/1.334330
关键词: Heterojunction 、 Semiconductor 、 Materials science 、 Ohmic contact 、 Doping 、 Contact resistance 、 Optoelectronics 、 Electrical resistivity and conductivity 、 Field-effect transistor 、 Sheet resistance
摘要: … The contact mechanism to the 2DEG in MODFETs is not yet clear. To achieve a 2DEG we … Even a small barrier can suppress the current flow from the 2DEG to the drain contact, and …
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