Ohmic contact penetration and encroachment in GaAs/AlGaAs and GaAs FETs
作者： H. Goronkin , S. Tehrani , T. Remmel , P.L. Fejes , K.J. Johnston
DOI: 10.1109/16.19927
关键词:
摘要: Hypoeutectic AuGe/Ni ohmic contacts on GaAs and GaAs/AlGaAs were characterized by SEM, TEM, energy dispersive X-ray analysis. The two main components of the contact confirmed to be NiGeAs islands distributed in an Au-Ga alloy. larger more evenly MESFETs than MODFETs. Vertical penetration was impeded but not halted AlGaAs. Since did melt during alloying cycle, there no lateral encroachment observed. >
sci-hub.se 参考文章(11)
P.M. Smith, U.K. Mishra, P.C. Chao, S.C. Palmateer, J.C.M. Hwang, Power performance of microwave high-electron mobility transistors IEEE Electron Device Letters. ,vol. 6, pp. 86- 87 ,(1985) , 10.1109/EDL.1985.26052
P. Zwicknagl, Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparison Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 476- 484 ,(1986) , 10.1116/1.583406
Z. Liliental-Weber, N. Newman, W. E. Spicer, R. Grónsky, J. Washburn, E. R. Weber, The Structure and Electrical Properties of Au Contacts to GaAs MRS Proceedings. ,vol. 54, pp. 415- ,(1985) , 10.1557/PROC-54-415
A. Christou, T. Efthimiopoulos, Z. Hatsopoulos, Ohmic contact control in modulation‐doped gallium arsenide field‐effect transistors Applied Physics Letters. ,vol. 49, pp. 1077- 1079 ,(1986) , 10.1063/1.97480
Masanori Murakami, KD Childs, John M Baker, A Callegari, Microstructure studies of AuNiGe Ohmic contacts to n-type GaAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 903- 911 ,(1986) , 10.1116/1.583535
Yih‐Cheng Shih, Masanori Murakami, E. L. Wilkie, A. C. Callegari, Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs Journal of Applied Physics. ,vol. 62, pp. 582- 590 ,(1987) , 10.1063/1.339860
W.L. Jones, L.F. Eastman, High-performance AlGaAs/GaAs MODFET'S with improved ohmic contacts IEEE Transactions on Electron Devices. ,vol. 33, pp. 712- 716 ,(1986) , 10.1109/T-ED.1986.22556
A. Ketterson, F. Ponse, T. Henderson, J. Klem, H. Morkoç, Extremely low contact resistances for AlGaAs/GaAs modulation‐doped field‐effect transistor structures Journal of Applied Physics. ,vol. 57, pp. 2305- 2307 ,(1985) , 10.1063/1.334330
T. S. Kuan, P. E. Batson, T. N. Jackson, H. Rupprecht, E. L. Wilkie, Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs Journal of Applied Physics. ,vol. 54, pp. 6952- 6957 ,(1983) , 10.1063/1.332011
P.C. Chao, S.C. Palmateer, P.M. Smith, U.K. Mishra, K.H.G. Duh, J.C.M. Hwang, Millimeter-wave low-noise high electron mobility transistors IEEE Electron Device Letters. ,vol. 6, pp. 531- 533 ,(1985) , 10.1109/EDL.1985.26219