Ohmic contacts to III V compound semiconductors: A review of fabrication techniques

作者: A. Piotrowska , A. Guivarc'h , G. Pelous

DOI: 10.1016/0038-1101(83)90083-7

关键词:

摘要: … contact phenomena in metal--semiconductor contacts is given in[2… semiconductor contacts have shown that most of the metal--semiconductor combinations form depletion layer contacts …

参考文章(116)
Haruo Nagai, Yoshio Noguchi, InP‐GaxIn1−xAsyP1−ydouble heterostructure for 1.5 μm wavelength Applied Physics Letters. ,vol. 32, pp. 234- 236 ,(1978) , 10.1063/1.90002
M. G. Astles, F. G. H. Smith, E. W. Williams, Indium Phosphide Journal of The Electrochemical Society. ,vol. 120, pp. 1750- 1757 ,(1973) , 10.1149/1.2403357
G.Y. Robinson, N.L. Jarvis, Auger electron spectroscopy and sputter etching of Ni/Au-Ge on n-GaAs Applied Physics Letters. ,vol. 21, pp. 507- 510 ,(1972) , 10.1063/1.1654237
J. Gyulai, J. W. Mayer, V. Rodriguez, A. Y. C. Yu, H. J. Gopen, Alloying Behavior of Au and Au–Ge on GaAs Journal of Applied Physics. ,vol. 42, pp. 3578- 3585 ,(1971) , 10.1063/1.1660773
S. Dhar, B. R. Nag, A Pulse Method for the Measurement of Contact Resistance and Bulk Resistance of Semiconductors Samples Journal of The Electrochemical Society. ,vol. 125, pp. 508- 510 ,(1978) , 10.1149/1.2131484
C.P. Lee, B.M. Welch, W.P. Fleming, Reliability of AuGe/Pt and AuGe/Ni ohmic contacts on GaAs Electronics Letters. ,vol. 17, pp. 407- 408 ,(1981) , 10.1049/EL:19810283
R. Salathé, G. Badertscher, W. Lüthy, F. K. Reinhart, R. A. Logan, Laser‐alloyed stripe‐geometry DH lasers Applied Physics Letters. ,vol. 35, pp. 439- 441 ,(1979) , 10.1063/1.91164
Shuichi Komatsu, Masako Nakahashi, Yoshiyasu Koike, Interface Structure of P-Type GaP/Au/Au-Zn Japanese Journal of Applied Physics. ,vol. 20, pp. 549- 552 ,(1981) , 10.1143/JJAP.20.549
S.U. Campisano, I. Catalano, G. Foti, E. Rimini, F. Eisen, M-A. Nicolet, Laser reordering of implanted amorphous layers in GaAs Solid-State Electronics. ,vol. 21, pp. 485- 488 ,(1978) , 10.1016/0038-1101(78)90285-X
E. B. Abrams, S. Sumski, W. A. Bonner, J. J. Coleman, Be doping of liquid-phase-epitaxial InP Journal of Applied Physics. ,vol. 50, pp. 4469- 4470 ,(1979) , 10.1063/1.326408